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Please use this identifier to cite or link to this item: http://hdl.handle.net/1974/6430

Title: Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth
Authors: Keating, S.
Urquhart, M.G.
McLaughlin, D.V.P.
Pearce, J.M.

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Keywords: indium gallium nitride
crystal growth
substrate temperature
Issue Date: 2011
Publisher: ACS
Citation: S. Keating, M.G. Urquhart, D.V.P. McLaughlin and J.M.Pearce, “Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth”, Crystal Growth & Design, 11 (2), pp 565–568, 2011. http://dx.doi.org/10.1021/cg101450n
Abstract: Indium gallium nitride films with nanocolumnar microstructure were deposited with varying indium content and substrate temperatures using plasma-enhanced evaporation on amorphous SiO2 substrates. FESEM and XRD results are presented, showing that more crystalline nanocolumnar microstructures can be engineered at lower indium compositions. Nanocolumn diameter and packing factor (void fraction) was found to be highly dependent on substrate temperature, with thinner and more closely packed nanocolumns observed at lower substrate temperatures.
URI: http://hdl.handle.net/1974/6430
Appears in Collections:Joshua M. Pearce

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