Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth
Urquhart, M. G.
McLaughlin, D. V. P.
Pearce, Joshua M.
MetadataShow full item record
Indium gallium nitride films with nanocolumnar microstructure were deposited with varying indium content and substrate temperatures using plasma-enhanced evaporation on amorphous SiO2 substrates. FESEM and XRD results are presented, showing that more crystalline nanocolumnar microstructures can be engineered at lower indium compositions. Nanocolumn diameter and packing factor (void fraction) was found to be highly dependent on substrate temperature, with thinner and more closely packed nanocolumns observed at lower substrate temperatures.
URI for this recordhttp://hdl.handle.net/1974/6430
Request an alternative formatIf you require this document in an alternate, accessible format, please contact the Queen's Adaptive Technology Centre
The following license files are associated with this item: